Invention Grant
- Patent Title: Method of measuring deep trenches with model-based optical spectroscopy
- Patent Title (中): 使用基于模型的光谱测量深沟的方法
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Application No.: US11994763Application Date: 2006-06-30
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Publication No.: US07839509B2Publication Date: 2010-11-23
- Inventor: Peter Rosenthal , Carlos A. Duran , Alexei Maznev , Alexander Mazurenko
- Applicant: Peter Rosenthal , Carlos A. Duran , Alexei Maznev , Alexander Mazurenko
- Applicant Address: US MA Natick
- Assignee: Advanced Metrology Systems LLC
- Current Assignee: Advanced Metrology Systems LLC
- Current Assignee Address: US MA Natick
- Agency: Goodwin Procter LLP
- International Application: PCT/IB2006/052211 WO 20060630
- International Announcement: WO2007/004177 WO 20070111
- Main IPC: G01B11/02
- IPC: G01B11/02
Abstract:
The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.
Public/Granted literature
- US20090122321A1 Method of Measuring Deep Trenches with Model-Based Optical Spectroscopy Public/Granted day:2009-05-14
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