Invention Grant
- Patent Title: Phase change memory array circuits and methods of manufacture
- Patent Title (中): 相变存储器阵列电路和制造方法
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Application No.: US12002121Application Date: 2007-12-14
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Publication No.: US07839672B1Publication Date: 2010-11-23
- Inventor: Winston Lee , Peter Lee
- Applicant: Winston Lee , Peter Lee
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory array includes cells with switches and phase-change elements that are in communication with the switches. Bit lines are in communication with the cells. Word lines are in communication with the cells. Different voltage source terminals each receive a respective source voltage. The different voltage source terminals are coupled to and supply current to at least one of the cells.
Information query
