Invention Grant
US07839903B2 Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
有权
非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化
- Patent Title: Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
- Patent Title (中): 非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化
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Application No.: US12030124Application Date: 2008-02-12
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Publication No.: US07839903B2Publication Date: 2010-11-23
- Inventor: Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01S3/10
- IPC: H01S3/10
Abstract:
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
Public/Granted literature
- US20080198881A1 OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS Public/Granted day:2008-08-21
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