Invention Grant
US07842882B2 Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
失效
用于高密度半导体膜生长的低成本和高通量的沉积方法和装置
- Patent Title: Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
- Patent Title (中): 用于高密度半导体膜生长的低成本和高通量的沉积方法和装置
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Application No.: US11070835Application Date: 2005-03-01
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Publication No.: US07842882B2Publication Date: 2010-11-30
- Inventor: Bulent M. Basol
- Applicant: Bulent M. Basol
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
The present invention describes a method of obtaining an absorber layer for a solar cell, That method includes depositing a preparatory material comprising a melt of at least one Group IIIA material on a base to form a precursor layer, and reacting the precursor layer with at least one Group VIA material to form a dense Group IBIIIAVIA absorber layer. The method described above can further include forming the preparatory material, the preparatory material comprising the melt of at least one Group IIIA material and a solid phase in the form of particles, such that the solid phase in the form of particles is included within the melt during the step of depositing. Various techniques for applying the preparatory material to the base as a melt are also described.
Public/Granted literature
- US20050194036A1 Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth Public/Granted day:2005-09-08
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