Invention Grant
- Patent Title: Low clamp voltage ESD device and method therefor
- Patent Title (中): 低钳位电压ESD器件及其方法
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Application No.: US12170630Application Date: 2008-07-10
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Publication No.: US07842969B2Publication Date: 2010-11-30
- Inventor: David D. Marreiro , Sudhama C. Shastri , Ali Salih , Mingjiao Liu , John Michael Parsey, Jr.
- Applicant: David D. Marreiro , Sudhama C. Shastri , Ali Salih , Mingjiao Liu , John Michael Parsey, Jr.
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L23/60
- IPC: H01L23/60
Abstract:
In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
Public/Granted literature
- US20100006889A1 LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR Public/Granted day:2010-01-14
Information query
IPC分类:
