Invention Grant
- Patent Title: Electronic device including insulating layers having different strains
- Patent Title (中): 电子器件包括具有不同应变的绝缘层
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Application No.: US11669794Application Date: 2007-01-31
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Publication No.: US07843011B2Publication Date: 2010-11-30
- Inventor: Paul A. Grudowski , Venkat R. Kolagunta , Mehul D. Shroff
- Applicant: Paul A. Grudowski , Venkat R. Kolagunta , Mehul D. Shroff
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L27/092
- IPC: H01L27/092

Abstract:
An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.
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