Invention Grant
- Patent Title: Transistor providing different threshold voltages and method of fabrication thereof
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Application No.: US12363796Application Date: 2009-02-02
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Publication No.: US07843018B2Publication Date: 2010-11-30
- Inventor: Sung-Ki Min
- Applicant: Sung-Ki Min
- Applicant Address: US CA Los Gatos
- Assignee: SuVolta, Inc.
- Current Assignee: SuVolta, Inc.
- Current Assignee Address: US CA Los Gatos
- Agency: Baker Botts L.L.P.
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.
Public/Granted literature
- US20090134475A1 Transistor Providing Different Threshold Voltages and Method of Fabrication Thereof Public/Granted day:2009-05-28
Information query
IPC分类:
