Invention Grant
US07843062B2 Thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature 有权
其中互连仅在室温以上被加热时才进行热可编程的反向逆向工程互连

Thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature
Abstract:
An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.
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