Invention Grant
- Patent Title: Method and structure of integrated rhodium contacts with copper interconnects
- Patent Title (中): 集成铑触点与铜互连的方法和结构
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Application No.: US12053969Application Date: 2008-03-24
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Publication No.: US07843067B2Publication Date: 2010-11-30
- Inventor: John M. Cotte , Balasubramanian Haran , Christopher C. Parks , Xiaoyan Shao , Eva E. Simonyi
- Applicant: John M. Cotte , Balasubramanian Haran , Christopher C. Parks , Xiaoyan Shao , Eva E. Simonyi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Connolly Bowe Lodge & Hutz LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.
Public/Granted literature
- US20090239062A1 METHOD AND STRUCTURE OF INTEGRATED RHODIUM CONTACTS WITH COPPER INTERCONNECTS Public/Granted day:2009-09-24
Information query
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