Invention Grant
- Patent Title: Pulse power generator using semiconductor switch
- Patent Title (中): 脉冲发电机采用半导体开关
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Application No.: US11801953Application Date: 2007-05-11
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Publication No.: US07843087B2Publication Date: 2010-11-30
- Inventor: Hong Je Ryoo , Jong Soo Kim , Geun Hie Rim , Guennadi Gussev
- Applicant: Hong Je Ryoo , Jong Soo Kim , Geun Hie Rim , Guennadi Gussev
- Applicant Address: KR Gyeongsangnam-Do
- Assignee: Korea Electro Technology Research Institute
- Current Assignee: Korea Electro Technology Research Institute
- Current Assignee Address: KR Gyeongsangnam-Do
- Agency: Frommer Lawrence & Haug LLP
- Agent Ronald R. Santucci
- Priority: KR10-2006-0107571 20061102
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
The present invention provides a pulse power generator using a semiconductor switch, which enables its lifespan to be significantly improved, allows for its miniaturization, and makes it possible to diversely control a high-voltage pulse output finally. According to the pulse power generator, it is possible to address and solve a difficulty in driving the semiconductor switch in series, i.e., the problems related to synchronization and insulation of a driving power supply, and to include a circuit which can cope with the generation of arc and short circuit to thereby significantly improve device protecting performance and stability of the pulse power generator.
Public/Granted literature
- US20080106151A1 Pulse power generator using semiconductor switch Public/Granted day:2008-05-08
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