Invention Grant
US07843112B2 Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device 有权
声表面波装置,模块装置,振荡电路及制造声表面波装置的方法

  • Patent Title: Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device
  • Patent Title (中): 声表面波装置,模块装置,振荡电路及制造声表面波装置的方法
  • Application No.: US12067240
    Application Date: 2006-09-25
  • Publication No.: US07843112B2
    Publication Date: 2010-11-30
  • Inventor: Takuya OwakiYuji MitsuiYuzuru Yoshizawa
  • Applicant: Takuya OwakiYuji MitsuiYuzuru Yoshizawa
  • Applicant Address: JP Tokyo
  • Assignee: Seiko Epson Corporation
  • Current Assignee: Seiko Epson Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge, PLC
  • Priority: JP2005-288987 20050930; JP2006-228768 20060825
  • International Application: PCT/JP2006/319633 WO 20060925
  • International Announcement: WO2007/037457 WO 20070405
  • Main IPC: H03H9/25
  • IPC: H03H9/25
Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device
Abstract:
An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle θ of a rotary Y cut quartz substrate is set in a range of −64.0°
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