Invention Grant
- Patent Title: Break-before-make predriver and level-shifter
- Patent Title (中): 先发制前预制和电平转换器
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Application No.: US10825481Application Date: 2004-04-14
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Publication No.: US07843234B2Publication Date: 2010-11-30
- Inventor: Vaishnav Srinivas , Vivek Mohan
- Applicant: Vaishnav Srinivas , Vivek Mohan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Jiayu Xu
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
A break-before-make predriver for disabling a PFET of an output driver before enabling an NFET, and vice versa. The predriver includes an input inverter, two cross-coupled inverters, and output buffers. The predriver provides enhanced break-before-make action through sizing the NFETs larger than the PFETs in the predriver's cross-coupled inverters. The input inverter, the cross-coupled inverters and the first and second output buffers are sized with respect to each other such that substantially equal break before make action is provided on both rising and falling edges. The predriver also includes level-shifting capabilities through a different voltage supply at the PFETs of the cross-coupled inverter. The predriver also includes two data output nodes for connection to the two inputs of an output driver. The predriver provides for tristate action by disabling the signal from the predriver output nodes.
Public/Granted literature
- US20050231260A1 Break before make predriver and level-shifter Public/Granted day:2005-10-20
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