Invention Grant
- Patent Title: HVNMOS/HVPMOS switched capacitor charge pump having ideal charge transfer
-
Application No.: US12290951Application Date: 2008-11-05
-
Publication No.: US07843251B2Publication Date: 2010-11-30
- Inventor: Cang Ji
- Applicant: Cang Ji
- Applicant Address: DE Kirchheim/Teck-Nabern
- Assignee: Dialog Semiconductor GmbH
- Current Assignee: Dialog Semiconductor GmbH
- Current Assignee Address: DE Kirchheim/Teck-Nabern
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Priority: EP08392013 20081020
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
An integrated circuit for a charge pump with a charge stage and a pump stage and a single High-Voltage PMOS (HVPMOS) transistor as the main switch for each stage and two times two minimum HVPMOS transistors in series as a bulk switch with fixed bulk connections, where the minimum HVPMOS transistors are smaller sized transistors than the transistors of the main switch. The bulk of the main switch is switched synchronously to the voltage node of the HVPMOS transistor of the main switch to force the bulk voltage (VB) to be equal or larger than either the source voltage (VS) or the drain voltage (VD). Two non-overlapping clock signals are used to trigger the HVPMOS transistors of the charge and pump stage.
Public/Granted literature
- US20100097125A1 HVNMOS/HVPMOS switched capacitor charge pump having ideal charge transfer Public/Granted day:2010-04-22
Information query
IPC分类: