Invention Grant
US07843259B2 Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
有权
场效应晶体管电路和场效应晶体管电路的运行方法，用于减少热失控
- Patent Title: Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
- Patent Title (中): 场效应晶体管电路和场效应晶体管电路的运行方法，用于减少热失控
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Application No.: US11658224Application Date: 2005-07-18
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Publication No.: US07843259B2Publication Date: 2010-11-30
- Inventor: John R. Cutter
- Applicant: John R. Cutter
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: GB0416174.1 20040720
- International Application: PCT/IB2005/052389 WO 20050718
- International Announcement: WO2006/011111 WO 20060202
- Main IPC: H01L25/00
- IPC: H01L25/00
Abstract:
A field transistor is divided into a number of cells (6) and includes a separate first gate line (20) connected to first transistor cells (8) and a separate second gate line (22) connected to second transistor cells (10). A drive circuit is used to drive all the cells (6) in a normal, saturated operations state but to drive only the second cells (10) in a linear operations state to reduce the number of cells used in the linear operations state.
Public/Granted literature
- US20090212846A1 Insulated gate field effect transistors Public/Granted day:2009-08-27
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