Invention Grant
US07843523B2 Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask
有权
薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
- Patent Title: Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask
- Patent Title (中): 薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
-
Application No.: US12256683Application Date: 2008-10-23
-
Publication No.: US07843523B2Publication Date: 2010-11-30
- Inventor: Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
- Applicant: Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
- Applicant Address: JP Kanagawa-ken
- Assignee: Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
- Current Assignee: Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
- Current Assignee Address: JP Kanagawa-ken
- Agency: Stoel Rives LLP
- Priority: JP2005-107183 20050404; JP2005-127474 20050426
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L21/00
Abstract:
A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
Public/Granted literature
Information query
IPC分类:
