A memory device including a static random access memory (SRAM) cell comprising junction field effect transistors (JFETs) has been disclosed. The memory cell includes a first bipolar junction transistor (BJT) for driving a bit line at logic levels having a potential outside the potential range in which the SRAM cell operates. An amplifier including a level translator circuit provides a level shifting operation on the data provided by the bit line to provide level shifted data having a voltage swing within the potential range in which the SRAM cell operates. The level translator circuit includes a second BJT. In this way, fast read operation of a SRAM cell comprising JFETs may be provided.