Invention Grant
- Patent Title: System and method for performing post-plating morphological Cu grain boundary analysis
- Patent Title (中): 进行镀后形态Cu晶界分析的系统和方法
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Application No.: US11343792Application Date: 2006-01-31
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Publication No.: US07844101B2Publication Date: 2010-11-30
- Inventor: Vicky Svidenko , Lior Levin
- Applicant: Vicky Svidenko , Lior Levin
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: SNR Denton US LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06K9/40

Abstract:
Grain size variations within a copper film are quantified by analyzing an SEM image of a portion of the copper film, determining an approximate total length of grain boundaries within the SEM image, and calculating a grain boundary density based on the approximate total length of the grain boundaries and the area of the copper film represented in the SEM image. The calculated grain boundary density allows for correlating plating and anneal process parameters, as well as electrical and reliability performance.
Public/Granted literature
- US20060274931A1 System and method for performing post-plating morphological Cu grain boundary analysis Public/Granted day:2006-12-07
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