Invention Grant
US07844101B2 System and method for performing post-plating morphological Cu grain boundary analysis 有权
进行镀后形态Cu晶界分析的系统和方法

System and method for performing post-plating morphological Cu grain boundary analysis
Abstract:
Grain size variations within a copper film are quantified by analyzing an SEM image of a portion of the copper film, determining an approximate total length of grain boundaries within the SEM image, and calculating a grain boundary density based on the approximate total length of the grain boundaries and the area of the copper film represented in the SEM image. The calculated grain boundary density allows for correlating plating and anneal process parameters, as well as electrical and reliability performance.
Information query
Patent Agency Ranking
0/0