Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12426584Application Date: 2009-04-20
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Publication No.: US07844411B2Publication Date: 2010-11-30
- Inventor: Hiroyuki Kobayashi , Atsumasa Sako
- Applicant: Hiroyuki Kobayashi , Atsumasa Sako
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox, LLP
- Priority: JP2003-375276 20031105; JP2004-187938 20040625
- Main IPC: G01R27/28
- IPC: G01R27/28

Abstract:
A temperature detector sets the level of a temperature detecting signal to a level indicating a high temperature state, detecting that the chip temperature is higher than a first boundary temperature. The temperature detector sets the level of thereof to a level indicating a low temperature state, detecting that the chip temperature is lower than a second boundary temperature. A control circuit changes its operating state according to the level of the temperature detecting signal. This prevents the operating state of the control circuit from frequently switched even when the chip temperature fluctuates around the boundary temperatures, and accordingly reduces current consumption of the control circuit due to the switching operation. Further, the first and second boundary temperatures set a buffer zone, so that the temperature detector does not detect power supply noises as temperature variation. This can prevent malfunction of the temperature detector and the semiconductor integrated circuit.
Public/Granted literature
- US20090204358A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-08-13
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