Invention Grant
- Patent Title: Direct wafer bonded 2-D CUMT array
- Patent Title (中): 直接晶圆接合2-D CUMT阵列
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Application No.: US12288575Application Date: 2008-10-20
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Publication No.: US07846102B2Publication Date: 2010-12-07
- Inventor: Mario Kupnik , Butrus T. Khuri-Yakub
- Applicant: Mario Kupnik , Butrus T. Khuri-Yakub
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Lumen Patent Firm
- Main IPC: A61B8/14
- IPC: A61B8/14 ; H02N1/00

Abstract:
A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.
Public/Granted literature
- US20090122651A1 Direct wafer bonded 2-D CUMT array Public/Granted day:2009-05-14
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