Invention Grant
- Patent Title: Method for removing a halogen-containing residue
- Patent Title (中): 去除含卤素残留物的方法
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Application No.: US11779972Application Date: 2007-07-19
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Publication No.: US07846347B2Publication Date: 2010-12-07
- Inventor: Mark N. Kawaguchi , James S. Papanu , Scott Williams , Matthew Fenton Davis
- Applicant: Mark N. Kawaguchi , James S. Papanu , Scott Williams , Matthew Fenton Davis
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser IP Law Group
- Agent Alan Taboada
- Main IPC: C03C15/00
- IPC: C03C15/00
Abstract:
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
Public/Granted literature
- US20070254489A1 METHOD FOR REMOVING A HALOGEN-CONTAINING RESIDUE Public/Granted day:2007-11-01
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