Invention Grant
- Patent Title: Hybrid photomask and method of fabricating the same
- Patent Title (中): 混合光掩模及其制造方法
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Application No.: US11845711Application Date: 2007-08-27
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Publication No.: US07846619B2Publication Date: 2010-12-07
- Inventor: Dong-Hyun Han
- Applicant: Dong-Hyun Han
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0082470 20060829
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/14
Abstract:
A photomask includes a first region, a second region and a third region. The first and second regions are spaced apart by the third region. A first photomask type is disposed in the first region and a second photomask type, different from the first photomask type, is disposed in the second region. A dummy photomask pattern is disposed in the third region and is structured to form a dummy wafer pattern on a wafer.
Public/Granted literature
- US20080057414A1 HYBRID PHOTOMASK AND METHOD OF FABRICATING THE SAME Public/Granted day:2008-03-06
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