Invention Grant
US07846621B2 EUVL mask, method of fabricating the EUVL mask, and wafer exposure method using the EUVL mask
失效
EUVL掩模，EUVL掩模的制造方法和使用EUVL掩模的晶片曝光方法
- Patent Title: EUVL mask, method of fabricating the EUVL mask, and wafer exposure method using the EUVL mask
- Patent Title (中): EUVL掩模，EUVL掩模的制造方法和使用EUVL掩模的晶片曝光方法
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Application No.: US12059335Application Date: 2008-03-31
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Publication No.: US07846621B2Publication Date: 2010-12-07
- Inventor: Sung Ha Woo
- Applicant: Sung Ha Woo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0110510 20071031
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A mask for extreme ultra violet lithography (EUVL) and a method of fabricating the same, and a wafer exposure method using the same. According to a method of fabricating the mask, a light reflective layer pattern is formed on a transparent substrate to reflect extreme ultraviolet light. The extreme ultraviolet light is incident to and transmitted by the transparent substrate. A light absorption layer on the transparent substrate is formed to fill between the light reflective layer patterns and absorb the extreme ultraviolet light.
Public/Granted literature
- US20090111032A1 EUVL Mask, Method of Fabricating the EUVL Mask, and Wafer Exposure Method Using the EUVL Mask Public/Granted day:2009-04-30
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