Invention Grant
US07846642B2 Direct incident beam lithography for patterning nanoparticles, and the articles formed thereby
失效
用于图案化纳米颗粒的直接入射光刻,以及由此形成的制品
- Patent Title: Direct incident beam lithography for patterning nanoparticles, and the articles formed thereby
- Patent Title (中): 用于图案化纳米颗粒的直接入射光刻,以及由此形成的制品
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Application No.: US12193437Application Date: 2008-08-18
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Publication No.: US07846642B2Publication Date: 2010-12-07
- Inventor: Yuval Ofir , Vincent Martin Rotello , Mark Thomas Tuominen , Qijun Xiao , Bappaditya Samanta
- Applicant: Yuval Ofir , Vincent Martin Rotello , Mark Thomas Tuominen , Qijun Xiao , Bappaditya Samanta
- Applicant Address: US MA Boston
- Assignee: The University of Massachusetts
- Current Assignee: The University of Massachusetts
- Current Assignee Address: US MA Boston
- Agency: Cantor Colburn LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/20

Abstract:
Disclosed herein is a method for generating a three-dimensional structure on a surface. The method comprises forming a layer comprising a plurality of nanoparticles on a surface; and exposing a portion of the layer to incident radiation having a defined pattern at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure, wherein the three-dimensional structure has a shape defined by the pattern of the radiation and a height defined by the dosage of the incident radiation and a thickness of the nanoparticle layer. Alternatively, the method comprises forming a layer comprising a plurality of nanoparticles on a surface of a three-dimensional template; and exposing at least a portion of the layer to incident radiation at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure that corresponds to the three-dimensional template.
Public/Granted literature
- US20090047485A1 DIRECT INCIDENT BEAM LITHOGRAPHY FOR PATTERNING NANOPARTICLES, AND THE ARTICLES FORMED THEREBY Public/Granted day:2009-02-19
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