Invention Grant
US07846646B2 Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method
有权
抗蚀剂图案形成方法,薄膜图案形成方法和微型装置制造方法
- Patent Title: Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method
- Patent Title (中): 抗蚀剂图案形成方法,薄膜图案形成方法和微型装置制造方法
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Application No.: US11699026Application Date: 2007-01-29
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Publication No.: US07846646B2Publication Date: 2010-12-07
- Inventor: Akifumi Kamijima
- Applicant: Akifumi Kamijima
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-117699 20060421
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A resist pattern forming method comprises the steps of plasma-processing a surface of an acid-feedable resist layer formed and patterned on a surface of a substrate in a gas atmosphere containing a fluorocarbon; attaching a resin composition crosslinkable in the presence of an acid to the plasma-processed surface of the resist layer; crosslinking the resin composition in a part in contact with the resist layer by feeding an acid from the resist layer, so as to form a crosslinked layer covering the resist layer; and removing the resin composition from a part excluding the crosslinked layer, so as to yield a resist pattern comprising the resist layer and the crosslinked layer covering the resist layer.
Public/Granted literature
- US20070248916A1 Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method Public/Granted day:2007-10-25
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