Invention Grant
US07846646B2 Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method 有权
抗蚀剂图案形成方法,薄膜图案形成方法和微型装置制造方法

  • Patent Title: Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method
  • Patent Title (中): 抗蚀剂图案形成方法,薄膜图案形成方法和微型装置制造方法
  • Application No.: US11699026
    Application Date: 2007-01-29
  • Publication No.: US07846646B2
    Publication Date: 2010-12-07
  • Inventor: Akifumi Kamijima
  • Applicant: Akifumi Kamijima
  • Applicant Address: JP Tokyo
  • Assignee: TDK Corporation
  • Current Assignee: TDK Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge, PLC
  • Priority: JP2006-117699 20060421
  • Main IPC: G03F7/26
  • IPC: G03F7/26
Resist pattern forming method, thin-film pattern forming method, and microdevice manufacturing method
Abstract:
A resist pattern forming method comprises the steps of plasma-processing a surface of an acid-feedable resist layer formed and patterned on a surface of a substrate in a gas atmosphere containing a fluorocarbon; attaching a resin composition crosslinkable in the presence of an acid to the plasma-processed surface of the resist layer; crosslinking the resin composition in a part in contact with the resist layer by feeding an acid from the resist layer, so as to form a crosslinked layer covering the resist layer; and removing the resin composition from a part excluding the crosslinked layer, so as to yield a resist pattern comprising the resist layer and the crosslinked layer covering the resist layer.
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