Invention Grant
- Patent Title: Diamond film formation method and film formation jig thereof
- Patent Title (中): 金刚石成膜方法及其成膜夹具
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Application No.: US11674354Application Date: 2007-02-13
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Publication No.: US07846766B2Publication Date: 2010-12-07
- Inventor: Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
- Applicant: Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-069496 20060314
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
Public/Granted literature
- US20070218660A1 DIAMOND FILM FORMATION METHOD AND FILM FORMATION JIG THEREOF Public/Granted day:2007-09-20
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