Isolation trench with rounded corners for BiCMOS process

Invention Grant

US07846789B2 Isolation trench with rounded corners for BiCMOS process 有权

Title translation: 用于BiCMOS工艺的带圆角的隔离槽

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Patent Title: Isolation trench with rounded corners for BiCMOS process
Patent Title (中): 用于BiCMOS工艺的带圆角的隔离槽
Application No.: US11873205

Application Date: 2007-10-16
Publication No.: US07846789B2

Publication Date: 2010-12-07
Inventor: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
Applicant: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
Main IPC: H01L21/8238
IPC: H01L21/8238

Isolation trench with rounded corners for BiCMOS process

Abstract:

A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.

Abstract(Chinese):

一种半导体器件，包括半导体衬底上或半导体衬底中的第一晶体管器件和衬底上或衬底中的第二晶体管器件。该器件还包括位于第一晶体管器件和第二晶体管器件之间的绝缘沟槽。绝缘沟槽的至少一个上角是衬底的横向平面中的圆角。

Public/Granted literature

US20090096033A1 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS Public/Granted day:2009-04-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS