Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor device manufacturing system
- Patent Title (中): 制造半导体器件和半导体器件制造系统的方法
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Application No.: US12364830Application Date: 2009-02-03
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Publication No.: US07846792B2Publication Date: 2010-12-07
- Inventor: Masanori Terahara
- Applicant: Masanori Terahara
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-026602 20080206
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L21/8242 ; H01L21/20
Abstract:
A method for manufacturing a semiconductor device that controls the influence of a thickness of a stopper film even if there is a change in the thickness of the stopper film by measuring the thickness prior to etching to a predetermined thickness.
Public/Granted literature
- US20090197355A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM Public/Granted day:2009-08-06
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