Semiconductor layer structure and method of making the same

Invention Grant

US07846814B2 Semiconductor layer structure and method of making the same 有权

Title translation: 半导体层结构及制作方法

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Patent Title: Semiconductor layer structure and method of making the same
Patent Title (中): 半导体层结构及制作方法
Application No.: US12165475

Application Date: 2008-06-30
Publication No.: US07846814B2

Publication Date: 2010-12-07
Inventor: Sang-Yun Lee
Applicant: Sang-Yun Lee
Agency: Schmeiser Olsen & Watts LLP
Main IPC: H01L21/30
IPC: H01L21/30

Semiconductor layer structure and method of making the same

Abstract:

A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device.

Abstract(Chinese):

形成半导体结构的方法包括提供衬底并提供由衬底承载的分离区域。提供了一种包括晶体半导体层堆叠的器件结构，其中脱离区域位于器件结构和衬底之间。堆叠被处理以形成垂直取向的半导体器件。

Public/Granted literature

US20080261380A1 Semiconductor Layer Structure And Method Of Making The Same Public/Granted day:2008-10-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）