Invention Grant
- Patent Title: Method of forming a metal bump on a semiconductor device
- Patent Title (中): 在半导体器件上形成金属凸块的方法
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Application No.: US12453299Application Date: 2009-05-06
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Publication No.: US07846831B2Publication Date: 2010-12-07
- Inventor: Takeshi Matsumoto
- Applicant: Takeshi Matsumoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2006-127168 20060501
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763
Abstract:
An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.
Public/Granted literature
- US20090221142A1 Method of forming a metal bump on a semiconductor device Public/Granted day:2009-09-03
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