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US07846833B2 Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device 有权
适用于通过镶嵌法和半导体器件形成布线的半导体器件的制造方法

Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
Abstract:
An interlayer insulating film having a concave portion is formed on a semiconductor substrate. A tight adhesion film is formed on the inner surface of the concave portion and the upper surface of the insulating film. The surface of the adhesion layer is covered with an auxiliary film made of Cu alloy containing a first metal element. A conductive member containing a second metal element other than the first metal element is embedded in the concave portion, and deposited on the auxiliary film. Heat treatment is performed to make atoms of the first metal element in the auxiliary film segregate on the inner surface of the concave portion. The adhesion layer contains an element for enhancing tight adhesion of the auxiliary film more than if the auxiliary film is deposited directly on a surface of the interlayer insulating film. During the period until the barrier layer having also the function of enhancing tight adhesion, it becomes possible to retain sufficient tight adhesion of a wiring member and prevent peel-off of the wiring member.
Abstract(Chinese):

在半导体基板上形成具有凹部的层间绝缘膜。 在凹部的内表面和绝缘膜的上表面上形成紧密粘合膜。 粘附层的表面覆盖有由含有第一金属元素的Cu合金制成的辅助膜。 包含除了第一金属元件之外的第二金属元件的导电构件被嵌入在凹部中，并且沉积在辅助膜上。 进行热处理，使辅助膜中的第一金属元素的原子在凹部的内表面分离。 如果辅助膜直接沉积在层间绝缘膜的表面上，则粘合层包含用于增强辅助膜的紧密粘附的元件。 在阻隔层也具有增强紧密附着力的时段期间，可以保持布线部件的足够的紧密粘合性并防止布线部件的剥离。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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