Invention Grant
US07846839B2 Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
有权
成膜方法，半导体器件制造方法，半导体器件，程序和记录介质
- Patent Title: Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
- Patent Title (中): 成膜方法，半导体器件制造方法，半导体器件，程序和记录介质
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Application No.: US11718100Application Date: 2005-10-03
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Publication No.: US07846839B2Publication Date: 2010-12-07
- Inventor: Yasuhiko Kojima , Naoki Yoshii
- Applicant: Yasuhiko Kojima , Naoki Yoshii
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-312497 20041027
- International Application: PCT/JP2005/018287 WO 20051003
- International Announcement: WO2006/046386 WO 20060504
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.
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