Invention Grant
- Patent Title: Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
- Patent Title (中): 高氮化硅到氧化硅去除速率比的抛光组合物和方法
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Application No.: US12364253Application Date: 2009-02-02
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Publication No.: US07846842B2Publication Date: 2010-12-07
- Inventor: Phillip W. Carter , Timothy Johns
- Applicant: Phillip W. Carter , Timothy Johns
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas E. Ombolt; Francis J. Koszyk; Steven D. Weseman
- Main IPC: H01L21/304
- IPC: H01L21/304 ; B44C1/22
Abstract:
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
Public/Granted literature
- US20090137124A1 POLISHING COMPOSITION AND METHOD FOR HIGH SILICON NITRIDE TO SILICON OXIDE REMOVAL RATE RATIOS Public/Granted day:2009-05-28
Information query
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