Invention Grant
- Patent Title: Method of fabricating insulation layer and method of fabricating semiconductor device using the same
- Patent Title (中): 制造绝缘层的方法和使用其制造半导体器件的方法
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Application No.: US12346691Application Date: 2008-12-30
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Publication No.: US07846850B2Publication Date: 2010-12-07
- Inventor: Yang-Han Yoon
- Applicant: Yang-Han Yoon
- Applicant Address: KR Icheon-Si, Gyeonggi-Do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-Si, Gyeonggi-Do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0127723 20081216
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for fabricating an insulation layer includes forming an insulation layer over a nitride layer using a silicon source and a phosphorus source, wherein the insulation layer includes a first insulation layer contacting the nitride layer and a second insulation layer formed on the first insulation layer, wherein the first insulation layer is formed using a higher flow rate of the silicon source and a lower flow rate of the phosphorus source than used with the second insulation layer.
Public/Granted literature
- US20100151668A1 METHOD OF FABRICATING INSULATION LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2010-06-17
Information query
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