Invention Grant
US07847209B2 Method of forming a metal oxide film and microwave power source device used for the above method
有权
形成金属氧化物膜的方法和用于上述方法的微波电源装置
- Patent Title: Method of forming a metal oxide film and microwave power source device used for the above method
- Patent Title (中): 形成金属氧化物膜的方法和用于上述方法的微波电源装置
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Application No.: US10530357Application Date: 2003-10-09
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Publication No.: US07847209B2Publication Date: 2010-12-07
- Inventor: Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
- Applicant: Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
- Applicant Address: JP Tokyo
- Assignee: Toyo Seikan Kaisha, Ltd.
- Current Assignee: Toyo Seikan Kaisha, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2002-295908 20021009; JP2003-112136 20030416; JP2003-116301 20030421
- International Application: PCT/JP03/12946 WO 20031009
- International Announcement: WO2004/033753 WO 20040422
- Main IPC: B23K9/00
- IPC: B23K9/00 ; B23K9/02 ; B23B9/04

Abstract:
A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.
Public/Granted literature
- US20060138099A1 Method of forming a metal oxide film and microwave power source unit for use in the method Public/Granted day:2006-06-29
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