Invention Grant
- Patent Title: Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
- Patent Title (中): 基板检查装置,基板检查方法及制造半导体装置的方法
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Application No.: US12289846Application Date: 2008-11-05
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Publication No.: US07847250B2Publication Date: 2010-12-07
- Inventor: Ichirota Nagahama , Yuichiro Yamazaki , Takamitsu Nagai , Motosuke Miyoshi
- Applicant: Ichirota Nagahama , Yuichiro Yamazaki , Takamitsu Nagai , Motosuke Miyoshi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2003-149172 20030527; JP2003-149416 20030527
- Main IPC: H01J37/244
- IPC: H01J37/244 ; H01J37/26

Abstract:
A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.
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