Invention Grant
- Patent Title: Semiconductor manufacturing apparatus and method thereof
- Patent Title (中): 半导体制造装置及其方法
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Application No.: US11411822Application Date: 2006-04-27
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Publication No.: US07847270B2Publication Date: 2010-12-07
- Inventor: Takema Ito , Hiroyuki Morinaga , Arata Inoue
- Applicant: Takema Ito , Hiroyuki Morinaga , Arata Inoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-180666 20050621
- Main IPC: G21G5/00
- IPC: G21G5/00

Abstract:
According to the present invention, there is provided a semiconductor manufacturing apparatus having: a process flow information creating section which registers an exposure device as a device for performing the pattern writing processing and an electron beam direct writing device as an alternative to the exposure device, when creating process flow information by sequentially registering processing conditions of processings in a semiconductor manufacturing process; and a control section which searches for information on the pattern writing processing based on the process flow information before the pattern writing processing, determines whether or not a mask used by the exposure device for performing the pattern writing processing searched for is installed in the exposure device, and sets the exposure device to perform the pattern writing processing in the case where it has been determined that the mask is installed in the exposure device, or sets the electron beam direct writing device to perform the pattern writing processing in the case where it has been determined that the mask is not installed in the exposure device.
Public/Granted literature
- US20060287752A1 Semiconductor manufacturing apparatus and method thereof Public/Granted day:2006-12-21
Information query
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |