Invention Grant
- Patent Title: Low-capacitance electrostatic discharge protection diodes
- Patent Title (中): 低容量静电放电保护二极管
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Application No.: US10335008Application Date: 2002-12-31
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Publication No.: US07847317B2Publication Date: 2010-12-07
- Inventor: Timothy J. Maloney , Steven S. Poon
- Applicant: Timothy J. Maloney , Steven S. Poon
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L23/62 ; H01L29/00 ; H01L25/00 ; H02M7/162
Abstract:
A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple the supply diffusion regions to a voltage supply. Lines of the first and second conductive layers are substantially parallel to each other in a diode region of the diode. Further, for one aspect, a tap for the diode to be coupled to a supply is wider than a minimum width.
Public/Granted literature
- US20040124473A1 Low-capacitance electrostatic discharge protection diodes Public/Granted day:2004-07-01
Information query
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