Invention Grant
US07847325B2 Method of making discrete trap memory (DTM) mediated by fullerenes
有权
由富勒烯介导的离散陷阱记忆（DTM）的方法
- Patent Title: Method of making discrete trap memory (DTM) mediated by fullerenes
- Patent Title (中): 由富勒烯介导的离散陷阱记忆（DTM）的方法
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Application No.: US12403216Application Date: 2009-03-12
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Publication No.: US07847325B2Publication Date: 2010-12-07
- Inventor: Gerhard Poeppel , Georg Tempel
- Applicant: Gerhard Poeppel , Georg Tempel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/788 ; H01L21/02 ; H01L51/00 ; H01L29/68 ; H01L21/04 ; H01L21/336
Abstract:
A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.
Public/Granted literature
- US20090176358A1 Discrete Trap Memory (DTM) Mediated by Fullerenes Public/Granted day:2009-07-09
Information query
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