Invention Grant
- Patent Title: Capacitor electrode, method for manufacturing the same, and semiconductor device
- Patent Title (中): 电容器电极及其制造方法以及半导体装置
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Application No.: US12392492Application Date: 2009-02-25
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Publication No.: US07847328B2Publication Date: 2010-12-07
- Inventor: Takakazu Kiyomura
- Applicant: Takakazu Kiyomura
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-057719 20080307
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A capacitor electrode is composed of an SrRuO3 film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.
Public/Granted literature
- US20090225493A1 CAPACITOR ELECTRODE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE Public/Granted day:2009-09-10
Information query
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