Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US12368538Application Date: 2009-02-10
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Publication No.: US07847343B2Publication Date: 2010-12-07
- Inventor: Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- Applicant: Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-221764 20040729
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
Public/Granted literature
- US20090152619A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-06-18
Information query
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