Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US12724409Application Date: 2010-03-15
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Publication No.: US07847347B2Publication Date: 2010-12-07
- Inventor: Hitoshi Matsuura , Yoshito Nakazawa , Tsuyoshi Kachi , Yuji Yatsuda
- Applicant: Hitoshi Matsuura , Yoshito Nakazawa , Tsuyoshi Kachi , Yuji Yatsuda
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-216659 20060809
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.
Public/Granted literature
- US20100171174A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-08
Information query
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