Invention Grant
- Patent Title: Electronic device and method of manufacturing same
- Patent Title (中): 电子装置及其制造方法
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Application No.: US12185829Application Date: 2008-08-05
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Publication No.: US07847375B2Publication Date: 2010-12-07
- Inventor: Joachim Mahler , Ralf Wombacher , Ralf Otremba
- Applicant: Joachim Mahler , Ralf Wombacher , Ralf Otremba
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG Patent Department
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
This application relates to a semiconductor device, the semiconductor device comprising a metal carrier, an insulating foil partially covering the metal carrier, a first chip attached to the metal carrier over the insulating foil, and a second chip attached to the metal carrier over a region not covered by the insulating foil.
Public/Granted literature
- US20100032816A1 Electronic Device and Method of Manufacturing Same Public/Granted day:2010-02-11
Information query
IPC分类: