Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12537124Application Date: 2009-08-06
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Publication No.: US07847388B2Publication Date: 2010-12-07
- Inventor: Noriyuki Takahashi
- Applicant: Noriyuki Takahashi
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2003-433603 20031226
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
Chipping of semiconductor chips is to be prevented. A semiconductor device comprises a semiconductor chip having a main surface, a plurality of pads formed over the main surface, a rearrangement wiring formed over the main surface to alter an arrangement of the plurality of pads, and a protective film and an insulating film formed over the main surface, and a plurality of solder bumps each connected to the rearrangement wiring and arranged differently from the plurality of pads. The presence of a bevel cut surface obliquely continuous to the main surface and formed on a periphery of the main surface of the semiconductor chip prevents chipping.
Public/Granted literature
- US20090294965A1 Method of Manufacturing A Semiconductor Device Public/Granted day:2009-12-03
Information query
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