Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11798737Application Date: 2007-05-16
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Publication No.: US07847413B2Publication Date: 2010-12-07
- Inventor: Toshihiko Akiba , Takahiro Naito
- Applicant: Toshihiko Akiba , Takahiro Naito
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-183993 20060704
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device having a microcomputer chip and a plurality of high-speed memory chips and capable of making wiring lines of the memory chips equal in length is disclosed. The semiconductor device comprises a first wiring substrate, a microcomputer chip mounted over the first wiring substrate, a second wiring substrate disposed over the microcomputer chip, a plurality of first solder bumps for connecting the first and second wiring substrates with each other, and a plurality of second solder bumps as external terminals formed over a back surface of the wiring substrate. A first memory chip and a second memory chip, as high-speed memory chips, are stacked within the second wiring substrate, wiring of the first memory chip and that of the second memory chip are made equal in length within the second wiring substrate, and a completed package structure having the second wiring substrate is mounted over a completed package structure having the first wiring substrate.
Public/Granted literature
- US20080006947A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-01-10
Information query
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