Invention Grant
- Patent Title: Semiconductor device, information processing apparatus and power supply voltage variation suppressing method
- Patent Title (中): 半导体装置,信息处理装置和电源电压变动抑制方法
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Application No.: US12194911Application Date: 2008-08-20
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Publication No.: US07847610B2Publication Date: 2010-12-07
- Inventor: Yoshihiro Nishida
- Applicant: Yoshihiro Nishida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Priority: JP2007-221494 20070828
- Main IPC: H03K3/02
- IPC: H03K3/02 ; G05F1/10

Abstract:
According to one embodiment, a semiconductor device includes an internal circuit which is driven by a power supply voltage and is set in one of a first state and a second state in which an amount of current consumed by the internal circuit is greater than in the first state, and a wait control module. The wait control module detects that a state of the internal circuit has transitioned from the first state to the second state, and executes a wait control process of outputting an operation start instruction signal to the internal circuit after passing of a predetermined wait time from the detection of the transition of the state of the internal circuit from the first start to the second state.
Public/Granted literature
Information query
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