Invention Grant
- Patent Title: Light source frequency detection circuit using bipolar transistor
- Patent Title (中): 光源频率检测电路采用双极晶体管
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Application No.: US11942604Application Date: 2007-11-19
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Publication No.: US07847834B2Publication Date: 2010-12-07
- Inventor: Tiejun Dai , Sohei Manabe , Hongtao Yao , Jingzhou Zhang , Liping Deng
- Applicant: Tiejun Dai , Sohei Manabe , Hongtao Yao , Jingzhou Zhang , Liping Deng
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04N9/73
- IPC: H04N9/73

Abstract:
An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.
Public/Granted literature
- US20090128660A1 LIGHT SOURCE FREQUENCY DETECTION CIRCUIT USING BIPOLAR TRANSISTOR Public/Granted day:2009-05-21
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