Invention Grant
- Patent Title: Overlay measurement target
- Patent Title (中): 覆盖测量目标
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Application No.: US12125816Application Date: 2008-05-22
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Publication No.: US07847939B2Publication Date: 2010-12-07
- Inventor: Nigel Peter Smith , Yi-Sha Ku , Hsiu Lan Pang
- Applicant: Nigel Peter Smith , Yi-Sha Ku , Hsiu Lan Pang
- Applicant Address: US CA Milpitas
- Assignee: Nanometrics Incorporated
- Current Assignee: Nanometrics Incorporated
- Current Assignee Address: US CA Milpitas
- Agency: Silicon Valley Patent Group LLP
- Main IPC: G01B11/00
- IPC: G01B11/00 ; H01L23/544 ; H01L21/76 ; G06K9/00

Abstract:
In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.
Public/Granted literature
- US20080217794A1 Overlay Measurement Target Public/Granted day:2008-09-11
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