Invention Grant
US07848068B2 ESD protection circuit using self-biased current trigger technique and pumping source mechanism
有权
ESD保护电路采用自偏置电流触发技术和泵浦源机构
- Patent Title: ESD protection circuit using self-biased current trigger technique and pumping source mechanism
- Patent Title (中): ESD保护电路采用自偏置电流触发技术和泵浦源机构
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Application No.: US11740904Application Date: 2007-04-26
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Publication No.: US07848068B2Publication Date: 2010-12-07
- Inventor: Shih-Hung Chen , Ming-Dou Ker
- Applicant: Shih-Hung Chen , Ming-Dou Ker
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A circuit capable of providing electrostatic discharge (ESD) protection includes a first transistor including a first gate and a first source, the first gate being connected to a conductive pad, an impedance device between the first source and a first power rail capable of providing a resistor, a second transistor including a second gate and a second source, the second source being connected to the first power rail through the impedance device, and a clamp device between the first power rail and a second power rail, wherein the clamp device is capable of conducting a first portion of an ESD current and the second transistor is capable of conducting a second portion of the ESD current as the conductive pad is relatively grounded.
Public/Granted literature
- US20080062598A1 ESD PROTECTION CIRCUIT USING SELF-BIASED CURRENT TRIGGER TECHNIQUE AND PUMPING SOURCE MECHANISM Public/Granted day:2008-03-13
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