Invention Grant
US07848159B2 Non-volatile memory systems and methods including page read and/or configuration features
有权
非易失性存储器系统和方法，包括页面读取和/或配置特征
- Patent Title: Non-volatile memory systems and methods including page read and/or configuration features
- Patent Title (中): 非易失性存储器系统和方法，包括页面读取和/或配置特征
-
Application No.: US12275191Application Date: 2008-11-20
-
Publication No.: US07848159B2Publication Date: 2010-12-07
- Inventor: Hieu Van Tran , Sakhawat M. Khan
- Applicant: Hieu Van Tran , Sakhawat M. Khan
- Applicant Address: US CA Sunnyvale
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.
Public/Granted literature
- US20090147579A1 NON-VOLATILE MEMORY SYSTEMS AND METHODS INCLUDING PAGE READ AND/OR CONFIGURATION FEATURES Public/Granted day:2009-06-11
Information query
