Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12137069Application Date: 2008-06-11
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Publication No.: US07848169B2Publication Date: 2010-12-07
- Inventor: Takashi Shikata
- Applicant: Takashi Shikata
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2007-155525 20070612
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor device includes first and second memory circuits that are disposed in different power source blocks and operate in synchronization with a clock, first and second delay circuits that are connected between output terminals of one memory circuits and input terminals of the other memory circuits, and a determination circuit that determines whether it is a situation that can cause malfunction based on an input signal and an output signal in the memory circuits and outputs a determination result as an error detection signal. To the first and second memory circuits, different initial values are given, and it is monitored whether a signal is sent and received between the memory circuits in a toggle state or not. Thus, occurrence of a situation that can cause malfunction can be simply and quickly detected.
Public/Granted literature
- US20090147610A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-06-11
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